bipolar power product selection guide effcient, reliable and green
thyristors 4-quadrant triacs i t(rms) (a) v drm (v) i gt (max) (ma) sot54 (to92) sot78 (to220ab) sot78d (internally insulated to220ab) sot82 sot186a (isolated to220ab) sot223 sot404 (d 2 pak) sot428 (dpak) 0.6 400 5/5/5/7 mac97a6 600 5/5/5/7 mac97a8 400 / 600 5/5/5/7 bt1306-d 0.8 400 / 600 5/5/5/7 bt1308-d bt1308w-d 600 5/5/5/7 z00607ma 1 600 3/3/3/7 bt131w 600 / 800 3/3/3/7 bt131 600 / 800 5/5/5/7 bt131-d 600 / 800 10/10/10/10 bt131-e 600 / 800 3/3/3/5 z0103ma/na z0103mn/nn 600 / 800 5/5/5/7 z0107ma/na z0107mn/nn 600 / 800 10/10/10/10 z0109ma/na z0109mn/nn 600 / 800 3/3/3/5 z0103ma0/na0** z0103mn0/nn0** 600 / 800 5/5/5/7 z0107ma0/na0** z0107mn0/nn0** 600 / 800 10/10/10/10 z0109ma0/na0** z0109mn0/nn0** 600 5/5/5/10 bt132-d* 4 600 d/e/-/g bt134 800 e/- bt134 600 d/- bt136 bt136x bt136s 600 f bt136x bt136s 600 / 800 e bt136 bt136x bt136b bt136s 800 f bt136s 800 - bt136x bt136s 6 600 f/-/g bt236x 800 -/g bt236x 8 600 d/-/g bt137 bt137x bt137s 600 e bt137 bt137x bt137b bt137s 600 f bt137x bt137b bt137s 800 e bt137 bt137x bt137s 800 f bt137b bt137s 800 - bt137 bt137x bt137b 800 g bt137b bt137s 12 600 d bt138 bt138x 600 -/g bt138 bt138x bt138b 600 f bt138x bt138b 600 / 800 e bt138 bt138y bt138x bt138b 800 f bt138x 800 - bt138 bt138x 800 g bt138 16 600 e/- bt139 bt139x bt139b 600 f bt139x bt139b 600 g bt139x bt139b 800 e bt139 bt139b 800 f bt139b 800 - bt139 bt139x bt139b 800 g bt139 bt139b 20 600 50/50/50/75 mac223a8x 25 400 50/50/50/75 mac223a6 600 / 800 - bta140 * large chip / high i tsm ** enhanced immunity to false triggering i gt key: d 5 ma (10 ma in3+) e 10 ma (25 ma in 3+) f 25 ma (70 ma in 3+) - 35 ma (70 ma in 3+) g 50 ma (100 ma in 3+) brb643 3-quadrant 4-quadrant ty pe number bt a312b-600ct bt137x-600d v drm high t j max 150 c gate sensitivity i gt max: d = 5/5/5 ma e = 10/10/10 ma f = 25/25/25 ma c = 35/35/35 ma b = 50/50/50 ma gate sensitivity i gt max: d e f g = 5/5/5/10 ma = 10/10/10/25 ma = 25/25/25/70 ma = 35/35/35/70 ma = 50/50/50100 ma package indentifier: b s w x y = sot78 (t o220ab) = sot404 (d 2 p ak) = sot428 (dp ak) = sot223 = sot186a (isolated to 220ab) = sot78d (internally insulated to 220ab) triacs part numbering
thyristors 3-quadrant triacs part numbering i gt key: d 5 ma (10 ma in3+) e 10 ma (25 ma in 3+) f 25 ma (70 ma in 3+) - 35 ma (70 ma in 3+) g 50 ma (100 ma in 3+) 3-quadrant triacs types in bold red represent new products i t(rms) (a) v drm (v) i gt (max) (ma) sot54 (to92) sot78 (to220ab) sot78d (internally insulated to220ab) sot186a (isolated to220ab) sot223 sot404 (d 2 pak) sot428 (dpak) 0.8 600 / 800 d/e bta2008 1 600 / 800 b/e/er bta201 600 / 800 e bta201w 2 600 / 800 d/e bta202x 4 600 b/c/d/e/f bta204 bta204x bta204s 800 b/c/e bta204 bta204x bta204s 1000 c bta204x bta204s 8 600 b/d/e/f bta208 bta208x bta208s 800 b/e bta208 bta208x bta208s 800 f bta208 bta208x bta208s 1000 b bta208x 1000 c bta208x bta208b 1000 5 min - 35 max bta208x-1000c0 12 600 d bta312 bta312x bta312b 600 ct bta312 bta312b 600 / 800 b/c/e bta312 bta312x bta312b 600 / 800 c bta312y 800 et bta312 bta312b 600 / 800 b/c bta412y 16 600 bt/d bta316 600 / 800 b/c/e bta316 bta316x bta316b 600 / 800 et bta316 800 10 min - 50 max bta316x-800b0 600 / 800 b/c bta416y 25 600 bt bta225 600 / 800 b bta225 bta225b silicon controlled rectifers types in bold red represent new products i t(rms) (a) v drm & v rrm (v) i gt (max) (ma) sot54 (to92) sot78 (to220ab) sot82 sot186a (isolated to220ab) sot223 sot404 (d 2 pak) sot428 (dpak) sot533 (ipak) 0.8 400 0.012 ec103d1 400 (v drm only) 0.2 nxl0840 200 / 400 / 600 0.2 bt149b/d/g 200 / 400 / 600 0.2 bt169b/d/g 400 0.05 bt169d-l 800 0.1 bt169h 500 / 600 0.02 min - 0.2 max bt168e/g 200 0.2 mcr08bt1 1 600 0.02 min - 0.2 max bt168gw 600 0.07 min - 0.45 max bt168gwf** 600 0.2 bt148w-r* 4 400 / 500 / 600 0.2 bt148-r 600 0.2 bt150s-r 500 0.2 bt150-r 8 800 0.05 bt258s-lt 500 / 600 / 800 0.2 bt258-r bt258x-r 600 0.2 bt258u-r 800 0.2 bt258s-r 600 5 bt300s-r 12 500 / 650 5 bt151-l bt151s-l 500 / 650 / 800 15 bt151-r bt151x-r bt151s-r 650 15 bth151s-r 500 / 650 / 800 15 bt151-c bt151x-c bt151u-c 500 / 1000 15 bt151-rt 20 400 / 600 / 800 32 bt152-r bt152x-r bt152b-r 500 32 bt152-rt 25 800 35 bt145-r * large chip / high i tsm ** hi-com / fast turn-off t: high t j max 150 c
thyristors i gt key: d 5 ma e 10 ma ac thyristors i t(rms) (a) v drm (v) i gt (max) (ma) sot54 (to92) sot223 so8 0.2 600 d act102h 0.8 600 d act108 act108w 600 e act108 act108w types in bold red represent new products ac thyristor triacs i gt key: e 10 ma types in bold red italic underline represent products in development i t(rms) (a) v drm (v) i gt (max) (ma) sot186a sot428 2 800 e actt2x actt2s * integrated freewheeling diode package drawings are not to scale high voltage power bipolar transistors high voltage power bipolar transistors for lighting, smps and industrial applications types in bold red represent new products v cesm (v) i c(dc) (max) (a) 25 oc ind. t f (typ) (ns) @ i c (a) h fe (typ) @ i c (a) sot54 (to92) sot78 (to220ab) sot186a (isolated to220ab) sot404 (d 2 pak) sot428 (dpak) 700 1 80 1 7.5 0.8 buj100lr 1 80 1 7.5 0.8 phe13003a 1 50 1 14 0.75 buj100 1.5 100 0.5 9 1 phe13003c 1.5 100 0.5 9 1 phd13003c * 4 30 2 12.5 3 buj103a buj103ax buj103ad 4 30 2 12.5 3 bujd103ad * 4 100 2 17 2 phe13005 phe13005x 4 100 2 17 2 phd13005 * 8 20 5 11 4 buj105a buj105ab buj105ad 8 20 5 11 4 bujd105ad * 8 40 5 9 5 phe13007 10 20 5 11 6 buj106a 12 100 5 6 min - 30 max 8 phe13009 850 4 30 2 12.5 3 bujd203a * bujd203ax * bujd203ad * 1000 5 145 2.5 12 3 buj303a buj303ax buj303ad 1050 4 520 2 41 0.8 buj302a buj302ax buj302ad 5 200 2.5 10.5 3 buj303b 1200 6 170 2.5 15.5 3 buj403a brb642 current range: 3 = 1 - 2 amp 5 = 3 - 4 amp 7 = 8 amp 9 = 12 amp current range: 1 2/3 5 6 = 1 - 2 amp = 4 - 6 amp = 8 amp = 10 amp v oltage range: 1 = 700 v 2 = 850 v 3 = 1000 v 4 = 1200 v family type number d = tr ansistor + internal diode otherwise: transistor only phe13003dx bujx000adx package indentifier: = sot78 a = 1.0 amp / sot54 c = 1.5 amp / sot54 x = sot186a package indentifier: = sot78 c = sot54 x = sot186a b = sot404 d = sot428 o+eldo+an-2p-na4826a07v5-2p0t
power diodes hyperfast power diodes types in bold red italic underline represent products in development v rrm (v) i f(av) (a) v f (typ) @ 150c (v) @ i f (a) t rr (typ) @ 25c (ns) sod59 (to220ac) sod113 (2-pin sot186a) sot78 (to220ab) sot404 (d 2 pak) 600 5 1.4 5 19 byc5-600 byc5x-600 byc5b-600 8 1.4 8 19 byc8-600 byc8x-600 byc8b-600 8 1.4 8 19 byc8d-600 byc8dx-600 8 2 8 12.5 byc58x-600 10 1.4 10 19 byc10-600 byc10x-600 byc10b-600 2 x 5 1.4 5 19 byc10-600ct 15 1.4 15 19 byc15-600 byc15x-600 20 1.4 20 19 byc20-600 byc20x-600 power diodes ultrafast power diodes types in bold red represent new products v rrm (v) i f(av) (a) v f (typ) @ 150c (v) @ i f (a) t rr (typ) @ 25c (ns) sod59 (to220ac) sod113 (2-pin sot186a) sot78 (to220ab) sot186a (isolated to220ab) sot223 sot226 (i 2 pak) sot404 (d 2 pak) sot428 (dpak) 100 8 0.8 8 20 byw29e-100 2 x 10 0.72 8 20 byv32e-100 150 2 x 0.75 0.5 0.5 10 byv40e-150 8 0.8 8 20 byw29e-150 2 x 10 0.72 8 20 byv32e-150 2 x 15 0.78 15 20 byv42e-150 200 8 0.8 8 20 byw29e-200 byw29ex-200 byw29ed-200 2 x 5 0.8 5 15 byq28e-200 byq28x-200 byq28ed-200 14 0.83 14 20 byv79e-200 2 x 8 0.84 8 20 byq30e-200 2 x 10 0.72 8 20 byv32e-200 byv32g-200 byv32eb-200 2 x 15 0.78 15 20 byv42e-200 byv42g-200 byv42eb-200 300 2 x 5 0.95 5 50 byt28-300 400 9 0.9 8 50 byv29-400 2 x 10 0.87 10 50 byv34-400 500 9 0.9 8 50 byv29-500 byv29x-500 byv29b-500 2 x 5 0.95 5 50 byt28-500 15 0.9 15 50 byt79-500 2 x 10 0.87 10 50 byv34-500 2 x 15 0.95 15 50 byv44-500 600 5 0.97 5 50 byv25x-600 byv25g-600 byv25d-600 8 1.07 8 60 byr29-600 byr29x-600 9 0.97 8 50 byv29-600 byv29x-600 byv29g-600 byv29b-600 15 1 15 50 byt79-600 byt79x-600 2 x 10 0.92 10 50 byv34-600 byv34x-600 byv34g-600 5 1.1 5 17.5 byv25f-600 byv25fx-600 byv25f-600 byv25fb-600 byv25fd-600 9 1.25 8 17.5 byv29f-600 byv29fx-600 byv29f-600 byv29fb-600 byv29fd-600 2 x 10 1.3 10 20 byv410-600 byv410x-600 800 8 1.07 8 60 byr29-800 byr29x-800 brb644 ty pe number forward current (if) byv29fx-600 v rrm package indentifier: void b d g x = to 220ab (sot78) / to 220ac (sod59 ) = d 2 p ak (sot404) = dp ak (sot428) = i2p ak (sot226) = it o220ab (sot186a) / it o220ac (sod1 13) te chnology : c = ccm pfc v = dcm pfc or ultra fast t = dcm pfc process indentifier: void f d p = normal = enhanced ultrafast for crm and interleaved = die optimization = low leakage die number: void 2 3/4 5 = single die = single die = dual die in common cathode = casco diode = to20ab (o0s7280)/cdo2b)5
? 2011 nxp semiconductors n.v. all rights reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. www.nxp.com date of release: march 2011 document order number: 9397 750 17064 printed in the netherlands
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